MCD56-16IO1B phase leg thyristor \ diode module 3 1 2 5 4 part number MCD56-16IO1B backside: isolated tav t v v 1.24 rrm 60 1600 = v = v i = a 2x features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability direct copper bonded al2o3-ceramic line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control to-240aa industry standard outline rohs compliant soldering pins for pcb mounting base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20161222b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD56-16IO1B v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.26 r 0.45 k/w min. 60 v v 200 t = 25c vj t = c vj ma 5 v = v t = 25c vj i = a t v t = c c 85 p tot 222 w t = 25c c 100 1600 forward voltage drop total power dissipation conditions unit 1.57 t = 25c vj 125 v t0 v 0.85 t = c vj 125 r t 3.7 m ? v 1.24 t = c vj i = a t v 100 1.62 i = a 200 i = a 200 threshold voltage slope resistance for power loss calculation only a 125 v v 1600 t = 25c vj i a 94 p gm w t = 30 s 10 max. gate power dissipation p t = c c 125 w t = 5 p p gav w 0.5 average gate power dissipation c j 74 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 125 i2t t = 45c value for fusing t = c 125 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 125 1.50 1.62 8.13 7.87 ka ka ka ka 1.28 1.38 11.3 10.9 1600 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 125 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 125c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 150 a t pg = 0.45 di /dt a/s; g = 0.45 drm cr v = ? v drm gk 1000 1.5 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 100 ma t = c -40 vj 1.6 v 200 ma v gd gate non-trigger voltage t = c vj 0.2 v i gd gate non-trigger current 10 ma v = ? v d drm 125 latching current t = c vj 450 ma i l 25 t s p = 10 i a; g = 0.45 di /dt a/s g = 0.45 holding current t = c vj 200 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 0.45 di /dt a/s g = 0.45 v = ? v d drm turn-off time t = c vj 150 s t q di/dt = a/s 10 dv/dt = v/s 20 v = r 100 v; i a; t = 150 v = ? v drm t s p = 200 non-repet., i = 60 a t 100 r thch thermal resistance case to heatsink k/w rectifier 1700 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 0.20 ixys reserves the right to change limits, condition s and dimensions. 20161222b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD56-16IO1B ratings mcma85pd1600tb to-240aa-1b 1600 package t op c m d nm 4 mounting torque 2.5 t vj c 125 virtual junction temperature -40 weight g 81 symbol definition typ. max. min. conditions operation temperature unit m t nm 4 terminal torque 2.5 v v t = 1 second v t = 1 minute isolation voltage mm mm 13.0 9.7 16.0 16.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 200 a per terminal 100 -40 terminal to terminal to-240aa similar part package voltage class mcma65pd1600tb to-240aa-1b 1600 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MCD56-16IO1B 465984 box 36 MCD56-16IO1B standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.85 m ? v 0 max r 0 max slope resistance * 2.5 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 125 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20161222b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD56-16IO1B 3 1 2 5 4 outlines to-240aa ixys reserves the right to change limits, condition s and dimensions. 20161222b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD56-16IO1B i tsm i fsm [a] t [s] fig. 1 surge overload current i tsm , i fsm : crest value, t: duration t [ms] i 2 t [a 2 s] fig. 2 i 2 t versus time (1-10 ms) fig. 3 maximum forward current at case temperature i tavm [a] t c [c] 1500 1000 500 0 10 -3 10 -2 10 -1 10 0 10 1 t vj = 45c t vj = 125c 50 hz, 80% v rrm v r = 0 v 10 5 10 3 1 2 3 6 8 10 t vj = 45c t vj = 125c 10 4 120 80 60 40 20 0 0 50 100 150 dc 180 sin 120 60 30 100 fig. 4 power dissipation vs. onstate current and am bient temperature (per thyristor/diode) dc 180 sin 120 60 30 0 50 100 150 t a [c] i tavm , i favm [a] 0 20 40 60 80 150 100 50 0 p t [w] r thja [k/w] 0.8 1 1.2 1.5 2 2.5 3 4 fig. 6 three phase rectifier bridge: power dissipati on versus direct output current and ambient temperature r thka [k/w] 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 0 50 100 150 t a [c] i davm [a] 0 50 100 p tot [w] 100 0 200 300 400 600 circuit b6 3x mcc56 or 3x mcd56 500 150 i g [ma] v g [v] fig. 5 gate trigger charact. 10 0 10 1 10 2 10 3 10 4 0.1 1 10 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125 c 3 4 2 1 5 6 10 100 1000 1 10 100 1000 limit typ. t vj = 25 c i g [ma] t gd [s] fig. 7 gate trigger delay time thyristor ixys reserves the right to change limits, condition s and dimensions. 20161222b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCD56-16IO1B i rms [a] p tot [w] t a [c] [kw] 0.1 0.15 0.2 0.25 0.3 0.4 0.5 circuit w3 3x mcc56 or 3x mcd56 6 0 0 300 200 100 0 400 0 50 100 0 50 100 150 fig. 8 three phase ac-controller: power dissipation vs. rms output current and ambient temperature r thja 500 0.6 fig. 9 t ransient thermal impedance junction to case (per thyristor) 0.6 0.5 0.1 0 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.3 30 60 120 180 dc 0.2 0.4 30 60 120 180 dc fig. 10 transient thermal impedance junction to heatsink (per thy ristor) 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.8 0.6 0.2 0 0.4 r thjc for various conduction angles d: dc 0.450 180 0.470 120 0.490 60 0.505 30 0.520 constants for z thjc calculation: 1 0.014 0.0150 2 0.026 0.0095 3 0.410 0.1750 r thjk for various conduction angles d: dc 0.650 180 0.670 120 0.690 60 0.705 30 0.720 constants for z thjk calculation: 1 0.014 0.0150 2 0.026 0.0095 3 0.410 0.1750 4 0.200 0.6700 rectifier ixys reserves the right to change limits, condition s and dimensions. 20161222b data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
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